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	A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation
	Zhang, Lining ; Zhou, Xingye ; Xu, Yiwen ; Chen, Lin ; Zhou, Wang ; Li, Yingxue ; He, Frank ; Chan, Mansun
	2010
英文摘要	A unified drain current model for undoped or lightly doped double-gate (DG) and surrounding-gate (SRG) MOSFETs incorporating velocity saturation effect are presented in this paper. The unified charge-based core model for undoped or lightly doped DG and SRG MOSFETs is presented first. Caughey-Thomas engineering mobility model with exponent factor n=2 is then integrated self-consistently into the unified drain current model derivation of the two device structure. Extensive two dimensional (2D) and three dimensional (3D) device simulations are performed to validate the proposed model. Symmetry property of the proposed unified current model is obtained with the exponent factor n=2 in Cauhey-Thomas Model.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000282026500576&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/INEC.2010.5424994
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293044]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Lining,Zhou, Xingye,Xu, Yiwen,et al. A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation. 2010-01-01.

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