CORC

在结果中检索

CORC

浏览/检索结果: 共12条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Terahertz plasmon polariton formed in a Fabry-Perot cavity and a grating-coupled two-dimensional electron gas 会议论文
5th International Symposium on Photoelectronic Detection and Imaging (ISPDI) - Terahertz Technologies and Applications, Beijing, PEOPLES R CHINA, JUN 25-27, 2013
作者:  Huang, YD(黄永丹);  Zhang, BS(张宝顺);  Qin, H(秦华)
收藏  |  浏览/下载：31/0  |  提交时间：2014/01/15
A Terahertz Detector Based on AlGaN/GaN High Electron Mobility Transistor with Bowtie Antennas 会议论文
30th International Conference on the Physics of Semiconductors (ICPS-30), Seoul, SOUTH KOREA, JUL 25-30, 2010
作者:  Wu, DM (吴东岷);  Qin, H (秦华);  Zhang, ZP (张志鹏);  Zen, CH (曾春红);  Sun, YF (孙云飞)
收藏  |  浏览/下载：28/0  |  提交时间：2012/08/24
物理气相传输法生长并五苯单晶的形貌表征和生长模式研究 会议论文
中国化学会第二十五届学术年会论文摘要集（下册）, Abstracts of the 25th CCS Congress(Ⅱ), 中国化学会第二十五届学术年会, 25th CCS Congress, 中国吉林长春, CNKI, 中国化学会
曾雄辉; 王立铎; 乔娟; 董桂芳; 邱勇; Xionghui Zeng; Liduo Wang; Juan Qiao; Guifang Dong; Yong Qiu
收藏  |  浏览/下载：4/0
Optimization of two-dimensional electron gases and I-V characteristics for AlGaN/GaN HEMT devices 会议论文
SUPERLATTICES AND MICROSTRUCTURES, Meeting of the European-Materials-Research-Society, Strasbourg, FRANCE, Web of Science
Wang, Y; Ma, L; Yu, ZP; Tian, LL
收藏  |  浏览/下载：4/0
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, XL; Wang, CM; Hu, GX; Wang, JX; Li, JP
收藏  |  浏览/下载：154/51  |  提交时间：2010/03/29
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Han PD
收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
High-quality GaN grown by gas-source MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15

©版权所有 ©2017 CSpace - Powered by CSpace