High-quality metamorphic HEMT grown on GaAs substrates by MBE

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	High-quality metamorphic HEMT grown on GaAs substrates by MBE
	Zeng YP ; Cao X ; Cui LJ ; Kong MY ; Pan L ; Wang BQ ; Zhu ZP
	2001
会议名称	11th international conference on molecular beam epitaxy (mbe-xi)
会议日期	sep 11-15, 2000
会议地点	beijing, peoples r china
关键词	molecular beam epitaxy high electron mobility transistors DENSITY
页码	210-213
通讯作者	cao x chinese acad sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要	metamorphic high electron mobility transistor (m-hemt) structures have been grown on gaas substrates by molecular beam epitaxy (mbe). linearly graded and the step-graded ingaas and inalas buffet layers hal e been compared, and tem, pl and low-temperature hall have been used to analyze the properties of the buffer layers and the m-hemt structure. for a single-delta-doped m-hemt structure with an in0.53ga0.47as channel layer and a 0.8 mum step-graded inalas buffer layer, room-temperature mobility of 9000 cm(2)/v s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. these results are nearly equivalent to those obtained for the same structure grown on an inp substrate. a basic m-hemt device with 1 mum gate was fabricated, and g(m) is larger than 400 ms/mm. (c) 2001 elsevier science b.v. all rights reserved.
英文摘要	metamorphic high electron mobility transistor (m-hemt) structures have been grown on gaas substrates by molecular beam epitaxy (mbe). linearly graded and the step-graded ingaas and inalas buffet layers hal e been compared, and tem, pl and low-temperature hall have been used to analyze the properties of the buffer layers and the m-hemt structure. for a single-delta-doped m-hemt structure with an in0.53ga0.47as channel layer and a 0.8 mum step-graded inalas buffer layer, room-temperature mobility of 9000 cm(2)/v s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. these results are nearly equivalent to those obtained for the same structure grown on an inp substrate. a basic m-hemt device with 1 mum gate was fabricated, and g(m) is larger than 400 ms/mm. (c) 2001 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:17导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:17z (gmt). no. of bitstreams: 1 2911.pdf: 152025 bytes, checksum: 2b5fb5d4538937f6bc7248c11e49c1b9 (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.
会议录	journal of crystal growth, 227
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14931]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zeng YP,Cao X,Cui LJ,et al. High-quality metamorphic HEMT grown on GaAs substrates by MBE[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000.