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半导体研究所 [67]
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会议论文 [67]
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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
Morphology and wetting layer properties of InAs/GaAs nanostructures
会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:
Xu B
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC
;
Wang, JX
;
Liu, NX
;
Liu, Z
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
AlGaN
GaN template
A1N interlayer
MOCVD
crack
interference fringes
Study of infrared luminescence from Er-implanted GaN films
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/11/15
doping
metalorganic chemical vapor deposition
molecular beam epitaxy
gallium compounds
semiconducting gallium compounds
ERBIUM
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:
Zhang YH
;
Jiang DS
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
quantum wells
GaAsSb/GaAs
GAAS
LASERS
GAIN
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
收藏
  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:16/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
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