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科研机构
半导体研究所 [9]
内容类型
会议论文 [9]
发表日期
2005 [1]
2004 [3]
2001 [5]
学科主题
半导体材料 [9]
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内容类型:会议论文
专题:半导体研究所
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Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
会议论文
icmat symposium on science and technologies of nanomaterials, singapore, singapore, dec 07-12, 2003
Zeng, XB
;
Liao, XB
;
Dai, ST
;
Wang, B
;
Xu, YY
;
Xiang, XB
;
Hu, ZH
;
Diao, HW
;
Kong, GL
收藏
  |  
浏览/下载:203/49
  |  
提交时间:2010/03/29
chemical vapor deposition processes
nanomaterials
semiconducting silicon
VISIBLE PHOTOLUMINESCENCE
POROUS SILICON
AMORPHOUS-SILICON
SI
SPECTROSCOPY
FILMS
NANOSTRUCTURES
CONFINEMENT
GROWTH
Growth and characterization of 4H-SiC by horizontal hot-wall CVD
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, GS
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:134/34
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:135/48
  |  
提交时间:2010/03/29
SI(111)
ALN
Study of infrared luminescence from Er-implanted GaN films
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/11/15
doping
metalorganic chemical vapor deposition
molecular beam epitaxy
gallium compounds
semiconducting gallium compounds
ERBIUM
Epitaxial growth of SiC on complex substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
optical microscopy
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
SAPPHIRE
DEPOSITION
FILMS
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM
;
Sun GS
;
Zhu SR
;
Wang L
;
Luo MC
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
LOW-TEMPERATURE GROWTH
FILMS
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/11/15
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
High-quality GaN grown by gas-source MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Wang JX
;
Sun DZ
;
Wang XL
;
Li JM
;
Zeng YP
;
Hou X
;
Lin LY
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
characterization
molecular beam epitaxy
gallium compounds
nitrides
piezoelectric materials
semiconducting gallium compounds
MOLECULAR-BEAM EPITAXY
HETEROSTRUCTURES
SAPPHIRE
DIODES
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
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