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科研机构
半导体研究所 [10]
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会议论文 [10]
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光电子学 [6]
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内容类型:会议论文
专题:半导体研究所
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High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector
会议论文
conference on optoelectronic devices and integration, beijing, peoples r china, nov 08-11, 2004
Li CB
;
Cheng BW
;
Mao RW
;
Zuo YH
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:219/47
  |  
提交时间:2010/03/29
WAVE-GUIDE PHOTODETECTOR
Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser
会议论文
5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004
Xu QY
;
Chen SW
收藏
  |  
浏览/下载:167/32
  |  
提交时间:2010/03/29
fiber grating
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
会议论文
11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002
作者:
Zhao DG
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
wafer bunding
cubic GaN
LIGHT-EMITTING-DIODES
FIELD-EFFECT TRANSISTOR
SINGLE-CRYSTAL GAN
MICROWAVE PERFORMANCE
MIRROR
JUNCTION
Stress analysis of silica-based arrayed waveguide grating by a finite element method
会议论文
photonics asia symposium 2002, shanghai, peoples r china, oct 14-18, 2002
Deng XQ
;
Yang QQ
;
Wang HJ
;
Hu XW
;
Wang QM
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/10/29
finite element method
stress
silica optical waveguide on silicon
birefringence
OPTICAL WAVE-GUIDES
DIFFERENCE METHOD
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
会议论文
50th electronic components & technology conference (ectc 01), las vegas, nv, may 21-24, 2000
Li C
;
Yang QQ
;
Ou HY
;
Wang QM
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/10/29
MIRRORS
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface
会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP
;
Sun DZ
;
Li XB
;
Wang XL
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2010/11/15
STRESS
GROWTH
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes
会议论文
conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998
Wang GH
;
Ma XY
;
Zhang YF
;
Peng HI
;
Wang ST
;
Li YZ
;
Chen LH
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/10/29
LED
coupled distributed Bragg reflector
MOCVD
AlGaInP
Twin and grain boundary in InP: A synchrotron radiation study
会议论文
symposium on applications of synchrotron radiation techniques to materials science iv, san francisco, ca, apr 13-17, 1998
Han YJ
;
Jiang JH
;
Wang ZG
;
Liu XL
;
Jiao JH
;
Tian YL
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
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