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CORC

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Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Zhang, Renping; Yan, Wei; Wang, Xiaoliang; Yang, Fuhua
收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14
First principles study of the electronic properties of twinned SiC nanowires 期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191
作者:  Li JB
收藏  |  浏览/下载：100/6  |  提交时间：2011/07/05
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study 期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:  Li JB
收藏  |  浏览/下载：164/21  |  提交时间：2010/03/08
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM
收藏  |  浏览/下载：83/1  |  提交时间：2010/03/08
Nano-layer structure of silicon-on-insulator materials 期刊论文
journal of the korean physical society, 2003, 卷号: 42, 期号: 0, 页码: s713-s718
Wang X; Chen M; Chen J; Wang X; Dong YN; Liu XH; He P; Tian LL; Liu ZL
收藏  |  浏览/下载：26/0  |  提交时间：2010/08/12
Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD 期刊论文
science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 6, 页码: 777-782
Zheng XH; Qu B; Wang YT; Dai ZZ; Yang H; Liang JW
收藏  |  浏览/下载：95/12  |  提交时间：2010/08/12
Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN 期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6130-6134
Xu XL; Liu HT; Shi CS; Zhao YW; Fung S; Beling CD
收藏  |  浏览/下载：126/15  |  提交时间：2010/08/12
Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer 期刊论文
applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111
Wang LS; Liu XL; Zan YD; Wang J; Wang D; Lu DC; Wang ZG
收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12
Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN 期刊论文
journal of applied physics, 1996, 卷号: 79, 期号: 1, 页码: 188-194
Fan WJ; Li MF; Chong TC; Xia JB
收藏  |  浏览/下载：22/0  |  提交时间：2010/11/17
ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING 期刊论文
japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 4a, 页码: l418-l421
CHOI WJ; LEE S; ZHANG JM; KIM Y; KIM SK; LEE JI; KANG KN; CHO K
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/17

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