Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

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	Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer
	Wang LS ; Liu XL ; Zan YD ; Wang J ; Wang D ; Lu DC ; Wang ZG
刊名	applied physics letters
	1998
卷号	72 期号:1 页码:109-111
关键词	SINGLE CRYSTALLINE GAN LIGHT-EMITTING-DIODES VAPOR-PHASE EPITAXY THIN-FILMS GALLIUM NITRIDE 001 SILICON SAPPHIRE SI DEPOSITION ALN
ISSN号	0003-6951
通讯作者	wang ls,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	wurtzite gan films have been grown on (001) si substrates using gamma-al2o3 as an intermediate layer by low pressure (similar to 76 torr) metalorganic chemical vapor deposition. reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-al2o3 layer of "compliant" character was an effective intermediate layer for the gan film grown epitaxially on si. the narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m gan sample was 54 arcmin. the orientation relationship of gan/gamma-al2o3/si was (0001) gan parallel to(001) gamma-al2o3 parallel to(001) si, [11-20] gan parallel to[110] gamma-al2o3 parallel to[110] si. the photoluminescence measurement for gan at room temperature exhibited a near band-edge peak of 365 nm (3.4 ev). (c) 1998 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13298]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang LS,Liu XL,Zan YD,et al. Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer[J]. applied physics letters,1998,72(1):109-111.
APA	Wang LS.,Liu XL.,Zan YD.,Wang J.,Wang D.,...&Wang ZG.(1998).Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer.applied physics letters,72(1),109-111.
MLA	Wang LS,et al."Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer".applied physics letters 72.1(1998):109-111.