Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD

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	Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD
	Zheng XH ; Qu B ; Wang YT ; Dai ZZ ; Yang H ; Liang JW
刊名	science in china series a-mathematics physics astronomy
	2001
卷号	44 期号:6 页码:777-782
关键词	3C-SiC microtwins X-ray four-circle diffractometer APCVD CHEMICAL-VAPOR-DEPOSITION SILICON-CARBIDE PHASE EPITAXY THIN-FILMS GAN SI SUBSTRATE DEFECTS NITRIDE MBE
ISSN号	1006-9283
通讯作者	zheng xh,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	microtwins in the 3c-sic films grown on si(001) by apcvd were analyzed in detail using an x-ray four-circle diffractometer. the empty set scan shows that 3c-sic films can grow on si substrates epitaxially and the epitaxial relationship is revealed as (001)(3c-sic)//(001)(si), [111](3c-sic)//[111](si). other diffractions emerged in the pole figures of the (111) 3c-sic. we performed the (10 (1) over bar0) h-sic and the reciprocal space mapping of the (002) plane of twins for the first time, finding that the diffractions at chi = 15.8 degrees result from not hexagonal sic but microtwins of 3c-sic, and twin inclusions are estimated to be 1%.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12154]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zheng XH,Qu B,Wang YT,et al. Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD[J]. science in china series a-mathematics physics astronomy,2001,44(6):777-782.
APA	Zheng XH,Qu B,Wang YT,Dai ZZ,Yang H,&Liang JW.(2001).Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD.science in china series a-mathematics physics astronomy,44(6),777-782.
MLA	Zheng XH,et al."Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD".science in china series a-mathematics physics astronomy 44.6(2001):777-782.