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科研机构
半导体研究所 [11]
内容类型
期刊论文 [10]
会议论文 [1]
发表日期
2011 [2]
2009 [2]
2008 [1]
2006 [1]
2002 [2]
2001 [1]
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半导体物理 [11]
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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:35/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong)
;
Nosho H (Nosho, Hidetaka)
;
Tackeuchi A (Tackeuchi, Atsushi)
;
Bian LF (Bian, Lifeng)
;
Dong JR (Dong, Jianrong)
;
Niu ZC (Niu, Zhichuan)
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  |  
浏览/下载:176/28
  |  
提交时间:2010/03/08
ALLOYS
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study
期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:
Li JB
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  |  
浏览/下载:165/21
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
SILICON-CARBIDE NANOTUBES
FORMATION ENERGIES
CARBON NANOTUBES
BORON-NITRIDE
NANOWIRES
COMPOSITES
DEFECTS
FUSION
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD
期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ
;
Wang, XL
;
Guo, LC
;
Xiao, HL
;
Wang, CM
;
Ran, JX
;
Li, JP
;
Li, JM
收藏
  |  
浏览/下载:85/1
  |  
提交时间:2010/03/08
gallium nitride crack
low temperature aluminum nitride
interlayer
silicon
InN nanoflowers grown by metal organic chemical vapor deposition
期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 7, 页码: art.no.071113
Kang TT (Kang Ting-Ting)
;
Liu X (Liu Xianglin)
;
Zhang RQ (Zhang Ri Q.)
;
Hu WG (Hu Wei G.)
;
Cong G (Cong Guangwei)
;
Zhao FA (Zhao Feng-Ai)
;
Zhu Q (Zhu Qinsheng)
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  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
CRYSTAL-GROWTH
NITRIDE
NANOWIRES
Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy
期刊论文
solid-state electronics, 2002, 卷号: 46, 期号: 12, 页码: 2069-2074
作者:
Han PD
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  |  
浏览/下载:39/0
  |  
提交时间:2010/08/12
nitrogen vacancy scattering
GaN
mobility
MOCVD
N-TYPE GAN
NITRIDE
FILMS
ECR plasma in growth of cubic GaN by low pressure MOCVD
期刊论文
plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174
Gu B
;
Xu Y
;
Qin FW
;
Wang SS
;
Sui Y
;
Wang ZG
收藏
  |  
浏览/下载:78/7
  |  
提交时间:2010/08/12
ECR plasma
cubic GaN
low pressure MOCVD
MOLECULAR-BEAM EPITAXY
CYCLOTRON-RESONANCE PLASMA
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
GALLIUM NITRIDE
GAAS
DIMETHYLHYDRAZINE
Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells
期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6210-6216
Wan SP
;
Xia JB
;
Chang K
收藏
  |  
浏览/下载:123/9
  |  
提交时间:2010/08/12
FIELD-EFFECT TRANSISTORS
RECOMBINATION DYNAMICS
WIDTH DEPENDENCE
GAN
EXCITONS
ABSORPTION
SPECTRA
SEMICONDUCTORS
LUMINESCENCE
CONSTANTS
Optical transitions in GaNAs/GaAs single quantum well
会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
Luo XD
;
Xu ZY
;
Sun BQ
;
Pan Z
;
Li LH
;
Lin YW
;
Ge WK
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
GaNAs
photoluminescence
band offset
band bowing coefficient
localized exciton
MOLECULAR-BEAM EPITAXY
ALLOYS
TEMPERATURE
GAASN
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