InN nanoflowers grown by metal organic chemical vapor deposition

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	InN nanoflowers grown by metal organic chemical vapor deposition
	Kang TT (Kang Ting-Ting) ; Liu X (Liu Xianglin) ; Zhang RQ (Zhang Ri Q.) ; Hu WG (Hu Wei G.) ; Cong G (Cong Guangwei) ; Zhao FA (Zhao Feng-Ai) ; Zhu Q (Zhu Qinsheng)
刊名	applied physics letters
	2006
卷号	89 期号:7 页码:art.no.071113
关键词	CRYSTAL-GROWTH NITRIDE NANOWIRES
ISSN号	0003-6951
通讯作者	kang, tt, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: ktt219@163.com
中文摘要	hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. the sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. with the aid of hydrogen, a stable existence of metallic indium is achieved. this will induce the growth of inn nanoflowers via self-catalysis vapor-liquid-solid (vls) process. it is found that the vls process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and inn, which leads to the special morphology of the authors' inn nanoflower pattern. (c) 2006 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10462]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kang TT ,Liu X ,Zhang RQ ,et al. InN nanoflowers grown by metal organic chemical vapor deposition[J]. applied physics letters,2006,89(7):art.no.071113.
APA	Kang TT .,Liu X .,Zhang RQ .,Hu WG .,Cong G .,...&Zhu Q .(2006).InN nanoflowers grown by metal organic chemical vapor deposition.applied physics letters,89(7),art.no.071113.
MLA	Kang TT ,et al."InN nanoflowers grown by metal organic chemical vapor deposition".applied physics letters 89.7(2006):art.no.071113.