Optical transitions in GaNAs/GaAs single quantum well

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	Optical transitions in GaNAs/GaAs single quantum well
	Luo XD ; Xu ZY ; Sun BQ ; Pan Z ; Li LH ; Lin YW ; Ge WK
	2000
会议名称	international workshop on nitride semiconductors (iwn 2000)
会议日期	sep 24-27, 2000
会议地点	nagoya, japan
关键词	GaNAs photoluminescence band offset band bowing coefficient localized exciton MOLECULAR-BEAM EPITAXY ALLOYS TEMPERATURE GAASN
页码	677-680
通讯作者	luo xd chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	we have investigated ganas/gaas single quantum wells (sqws) grown by molecular beam epitaxy (mbe) using photoluminescence (pl), time-resolved pl (trpl) and photovoltaic (pv) techniques. the low temperature pl is dominated by spatially direct transitions involving electrons confined in ganas well and holes localized in the same ganas layer. this assignment was supported by pl decay time measurements and absorption line-shape analysis derived from the pv measurements. by fitting the experimental data with a simple calculation, the band offset of the gan0.015as0.985/gaas heterostructure was estimated, and a type ii band lineup in gan0.015as0.985/gaas qws was suggested. moreover, deltae(c), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (n) composition (x), and the average variation of deltae(c) is about 0.110ev per %n, the measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of wei et al [ref.2].
英文摘要	we have investigated ganas/gaas single quantum wells (sqws) grown by molecular beam epitaxy (mbe) using photoluminescence (pl), time-resolved pl (trpl) and photovoltaic (pv) techniques. the low temperature pl is dominated by spatially direct transitions involving electrons confined in ganas well and holes localized in the same ganas layer. this assignment was supported by pl decay time measurements and absorption line-shape analysis derived from the pv measurements. by fitting the experimental data with a simple calculation, the band offset of the gan0.015as0.985/gaas heterostructure was estimated, and a type ii band lineup in gan0.015as0.985/gaas qws was suggested. moreover, deltae(c), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (n) composition (x), and the average variation of deltae(c) is about 0.110ev per %n, the measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of wei et al [ref.2].; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:46z (gmt). no. of bitstreams: 1 2881.pdf: 322550 bytes, checksum: bcbc469c611346661234a7a781498925 (md5) previous issue date: 2000; japan soc appl phys, solid state phys & applicat div.; japan soc promot sci, comm short wavelength optoelectr devices, 162.; japan soc promot sci, comm convers light & elect, 125.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc appl phys, solid state phys & applicat div.; japan soc promot sci, comm short wavelength optoelectr devices, 162.; japan soc promot sci, comm convers light & elect, 125.
会议录	proceedings of the international workshop on nitride semiconductors, 1
会议录出版者	inst pure applied physics ; daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan
会议录出版地	daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan
学科主题	半导体物理
语种	英语
ISBN号	4-900526-13-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13707]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo XD,Xu ZY,Sun BQ,et al. Optical transitions in GaNAs/GaAs single quantum well[C]. 见:international workshop on nitride semiconductors (iwn 2000). nagoya, japan. sep 24-27, 2000.