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科研机构
半导体研究所 [9]
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期刊论文 [6]
会议论文 [3]
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2011 [1]
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半导体材料 [9]
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Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001
Yan, Guoguo
;
Sun, Guosheng
;
Wu, Hailei
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/06/14
Chemical vapor deposition
Deposition
Electric resistance
Epitaxial growth
Film growth
Sheet resistance
Silicon carbide
Silicon wafers
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/09
bulge test fracture property
silicon carbide thin films
Weibull distribution function
Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane
期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 2, 页码: 453-461
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/08
bulge test
fracture property
microelectromechanical systems (MEMS)
silicon carbide (SiC) thin films
Weibull distribution function
The study of high temperature annealing of a-SiC : H films
会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
收藏
  |  
浏览/下载:209/71
  |  
提交时间:2010/03/29
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Characterization of silicon carbide thin films and their use in colour sensor
期刊论文
solar energy materials and solar cells, 2005, 卷号: 87, 期号: 1-4, 页码: 343-348
Zhang S
;
Raniero L
;
Fortunato E
;
Liao X
;
Hu Z
;
Ferreira I
;
Aguas H
;
Ramos AR
;
Alves E
;
Martins R
收藏
  |  
浏览/下载:50/15
  |  
提交时间:2010/03/17
thin film materials & devices
Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer
期刊论文
thin solid films, 2005, 卷号: 484, 期号: 1-2, 页码: 261-264
Huang FY
;
Wang XF
;
Sun GS
;
Zhao WS
;
Zeng YP
;
Bian EL
收藏
  |  
浏览/下载:39/13
  |  
提交时间:2010/03/17
silicon carbide
DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV
期刊论文
journal of applied physics, 1991, 卷号: 70, 期号: 10, 页码: 5623-5627
LAU WM
;
BELLO I
;
FENG X
;
HUANG LJ
;
QIN FG
;
YAO ZY
;
REN ZZ
;
LEE ST
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
DIAMOND-LIKE FILMS
IONIZED DEPOSITION
REACTIVE IONS
THIN-FILMS
GROWTH
SURFACES
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