CORC

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CORC

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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1753-1755
Zhao YM (Zhao Yong-Mei); Sun GS (Sun Guo-Sheng); Li JY (Li Jia-Ye); Liu XF (Liu Xing-Fang); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Li JM (Li Jin-Min)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX; Wang XL; Hu GX; Wang JX; Li JP; Wang CM; Zeng YP; Li JM
收藏  |  浏览/下载：54/0  |  提交时间：2010/04/11
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载：167/71  |  提交时间：2010/03/29
ALN  IMPURITIES  DONOR  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载：206/60  |  提交时间：2010/03/29
Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer 期刊论文
journal of applied physics, 2004, 卷号: 96, 期号: 9, 页码: 4982-4988
Lu Y; Cong GW; Liu XL; Lu DC; Zhu QS; Wang XH; Wu JJ; Wang ZG
收藏  |  浏览/下载：79/29  |  提交时间：2010/03/09
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:  Zhao DG
收藏  |  浏览/下载：299/12  |  提交时间：2010/08/12
Study on pollution for the photoelectronic material InP 期刊论文
spectroscopy and spectral analysis, 2002, 卷号: 22, 期号: 4, 页码: 550-551
Xu JC; Ding XP; Chen DQ
收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Gao F; Huang DD; Li JP; Kong MY; Sun DZ; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载：149/5  |  提交时间：2010/08/12
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 457-460
Gao F; Huang DD; Li JP; Lin YX; Kong MY; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载：89/0  |  提交时间：2010/08/12
GSMBE  SiGe alloy  doping  SIMS  HBT  current gain  SI  

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