CORC

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CORC

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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28
Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Ren YY (Ren Y. Y.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：105/0  |  提交时间：2010/04/11
X-ray evidence for Ge/Si(001) island columns in multilayer structure 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 99-103
Huang CJ; Tang Y; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM
收藏  |  浏览/下载：114/26  |  提交时间：2010/08/12
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 766-769
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：97/14  |  提交时间：2010/08/12
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE 期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 646-650
Xu DP; Yang H; Zheng LX; Wang XJ; Duan LH; Wu RH
收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12
GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY 期刊论文
journal of crystal growth, 1993, 卷号: 129, 期号: 0, 页码: 629-634
LU DC
收藏  |  浏览/下载：31/0  |  提交时间：2010/11/15
INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION 期刊论文
journal of applied physics, 1991, 卷号: 70, 期号: 8, 页码: 4172-4175
LI CR; MAI ZH; CUI SF; ZHOU JM; WANG YT
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15

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