CORC

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CORC

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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：139/13  |  提交时间：2010/04/22
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:  Wei TB;  Wei XC;  Duan RF
收藏  |  浏览/下载：84/6  |  提交时间：2010/03/08
Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 151-154
作者:  Li Yan
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
Epitaxial growth on 4H-SiC by TCS as a silicon precursor 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 21-25
作者:  Liu Xingfang
收藏  |  浏览/下载：31/0  |  提交时间：2010/11/23
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：69/3  |  提交时间：2010/03/08
Influence of different interlayers on growth mode and properties of InN by MOVPE 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241
Zhang, RQ; Liu, XL; Kang, TT; Hu, WG; Yang, SY; Jiao, CM; Zhu, QS
收藏  |  浏览/下载：52/3  |  提交时间：2010/03/08
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载：167/71  |  提交时间：2010/03/29
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Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11

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