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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Nanocavity absorption enhancement for two-dimensional material monolayer systems. 期刊论文 opt. express, 2015, 卷号: 23, 期号: 6, 页码: 7120-7130 Haomin Song; Suhua Jiang; Dengxin Ji; Xie Zeng; Nan Zhang; Kai Liu; Chu Wang; Yun Xu; Qiaoqiang Gan 收藏  |  浏览/下载：21/0  |  提交时间：2016/04/15 Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals 期刊论文 journal of semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 012003-1-012003-5 作者:  Ye Xiaoling;  Xu Bo;  Jin Peng;  Peng Yinsheng;  Ye Xiaoling 收藏  |  浏览/下载：33/0  |  提交时间：2011/08/16 AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839 Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 2DEG   Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708 Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29 ELECTRON-MOBILITY TRANSISTORS   Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141 作者:  Xu B 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 low dimensional structures  strain  molecular beam epitaxy  quantum dots  ELECTRONIC-STRUCTURE  PHOTOLUMINESCENCE  INTERDIFFUSION  TRANSITIONS  SPECTRA   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  MOBILITY   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 127-131 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：95/9  |  提交时间：2010/08/12 molecular beam epitaxy  MOBILITY