Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer

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	Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer
	Ma ZY (Ma Zhi-Yong) ; Wang XL (Wang Xiao-Liang) ; Hu GX (Hu Guo-Xin) ; Ran JX (Ran Jun-Xue) ; Xiao HL (Xiao Hong-Ling) ; Luo WJ (Luo Wei-Jun) ; Tang J (Tang Jian) ; Li JP (Li Jian-Ping) ; Li JM (Li Jin-Min)
刊名	chinese physics letters
	2007
卷号	24 期号:6 页码:1705-1708
关键词	ELECTRON-MOBILITY TRANSISTORS
ISSN号	issn: 0256-307x
通讯作者	ma, zy, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: mazhiyong@mail.semi.ac.cn
中文摘要	a new algan/aln/gan high electron mobility transistor (hemt) structure using a compositionally step-graded algan barrier layer is grown on sapphire by metalorganic chemical vapour deposition (mocvd). the structure demonstrates significant enhancement of two-dimensional electron gas (2deg) mobility and smooth surface morphology compared with the conventional hemt structure with high al composition algan barrier. the high 2deg mobility of 1806 cm(2)/vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. the 2deg sheet density is independent of the measurement temperature, showing the excellent 2deg confinement of the step-graded structure. a low average sheet resistance of 314.5 omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. hemt devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 ms/mm and a maximum drain current density of 800 ma/mm.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9476]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma ZY ,Wang XL ,Hu GX ,et al. Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer[J]. chinese physics letters,2007,24(6):1705-1708.
APA	Ma ZY .,Wang XL .,Hu GX .,Ran JX .,Xiao HL .,...&Li JM .(2007).Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer.chinese physics letters,24(6),1705-1708.
MLA	Ma ZY ,et al."Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer".chinese physics letters 24.6(2007):1705-1708.