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科研机构
半导体研究所 [13]
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期刊论文 [10]
会议论文 [3]
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2011 [1]
2010 [1]
2009 [1]
2006 [1]
2004 [2]
2003 [1]
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半导体材料 [13]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire
期刊论文
journal of the electrochemical society, 2010, 卷号: 157, 期号: 7, 页码: h721-h726
Wei TB (Wei T. B.)
;
Hu Q (Hu Q.)
;
Duan RF (Duan R. F.)
;
Wei XC (Wei X. C.)
;
Yang JK (Yang J. K.)
;
Wang JX (Wang J. X.)
;
Zeng YP (Zeng Y. P.)
;
Wang GH (Wang G. H.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:293/52
  |  
提交时间:2010/06/18
atomic force microscopy
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H
;
Wang SM
;
Zhao QX
;
Sadeghi M
;
Larsson A
收藏
  |  
浏览/下载:181/35
  |  
提交时间:2010/03/08
Quantum well
Dilute nitride
Rapid thermal annealing
InGaAs
GaInNAs
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
characterization
point defects
molecular beam epitaxy
semiconducting gallium compounds
semiconducting indium compounds
semiconducting ternary compounds
1.55 MU-M
QUANTUM-WELLS
TEMPERATURE
GAAS
Growth and characterization of 4H-SiC by horizontal hot-wall CVD
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, GS
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:134/34
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH
;
Liao XB
;
Diao HW
;
Kong GL
;
Zeng XB
;
Xu YY
收藏
  |  
浏览/下载:33/3
  |  
提交时间:2010/03/09
annealing
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW
;
Zhao YW
;
Zeng YP
;
Jiao JH
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
diffusion
interfaces
substrates
molecular beam epitaxy
phosphides
semiconducting indium phosphide
UNDOPED SEMIINSULATING INP
CHEMICAL-VAPOR-DEPOSITION
PHOSPHIDE VAPOR
FE
INTERFACE
PHOTOLUMINESCENCE
WAFER
UNIFORMITY
DIFFUSION
PRESSURE
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Studies of 6H-SiC devices
期刊论文
current applied physics, 2002, 卷号: 2, 期号: 5, 页码: 393-399
Wang SR
;
Liu ZL
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2010/08/12
SiC
Schottky
pn junction diodes
MOS capacitor
JUNCTION DIODES
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:82/19
  |  
提交时间:2010/08/12
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
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