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Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12
A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 018104
作者:  Jin P
收藏  |  浏览/下载：99/17  |  提交时间：2010/04/04
Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:  Wei TB;  Yang JK;  Duan RF
收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05
Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling 期刊论文
spectroscopy and spectral analysis, 2007, 卷号: 27, 期号: 11, 页码: 2178-2181
Jia, GZ; Yao, JH; Zhang, CL; Shu, Q; Liu, RB; Ye, XL; Wang, ZG
收藏  |  浏览/下载：60/2  |  提交时间：2010/03/08
Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells 期刊论文
acta physica sinica, 2005, 卷号: 54, 期号: 7, 页码: 3370-3374
Hao HY; Kong GL; Zeng XB; Xu Y; Diao HW; Liao XB
收藏  |  浏览/下载：50/25  |  提交时间：2010/03/17
High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array 期刊论文
physical review b, 2005, 卷号: 71, 期号: 8, 页码: art.no.085304
Ding, CR; Wang, HZ; Xu, B
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/17
Second-Order Raman Scattering from n- and p-Type 4H-SiC 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1555-1560
Gao Xin; Sun Guosheng; Li Jinmin; Wang Lei; Zhao Wanshun; Zhang Yongxin; Zeng Yiping
收藏  |  浏览/下载：7/0  |  提交时间：2010/11/23
The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文
20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003
Zhang S; Liao X; Xu Y; Martins R; Fortunato E; Kong G
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文
applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
作者:  Jin P
收藏  |  浏览/下载：459/3  |  提交时间：2010/08/12
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:  Li CM;  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12

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