A novel application to quantum dot materials to the active region of superluminescent diodes | |
Li CM; Xu B; Jin P; Ye XL | |
刊名 | journal of crystal growth |
2002 | |
卷号 | 243期号:1页码:25-29 |
关键词 | atomic force microscopy low dimensional structures quantum dots strain molecular beam epitaxy superluminescent diodes 1.3 MU-M HIGH-POWER INTEGRATED ABSORBER INAS ISLANDS SPECTRUM WINDOW LAYER SIZE |
ISSN号 | 0022-0248 |
通讯作者 | zhang zy,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
中文摘要 | we have proposed a new superluminescent diodes (sld) aimed at wide spectrum-quantum dot superluminescent diodes (qd-sld), which is characterized by the introduction of a self-assembled asymmetric quantum dot pairs active region into conventional slid structure. we investigated the structure and optical properties of a bilayer sample with different inas deposition amounts in the first and second layer. we find that the structure of a self-assembled asymmetric quantum dot pairs can operate up to a 150 nm spectral width. in addition, as the first qds' density can modulate the density of the qds on the second layer, due to relatively high qds density of the first layer, we can get the strong pl intensity from a broad range. we think that for the broad spectral width and the strong pl intensity, this structure can be a promising candidate for qw-sld. (c) 2002 elsevier science b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/11778] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Li CM,Xu B,Jin P,et al. A novel application to quantum dot materials to the active region of superluminescent diodes[J]. journal of crystal growth,2002,243(1):25-29. |
APA | Li CM,Xu B,Jin P,&Ye XL.(2002).A novel application to quantum dot materials to the active region of superluminescent diodes.journal of crystal growth,243(1),25-29. |
MLA | Li CM,et al."A novel application to quantum dot materials to the active region of superluminescent diodes".journal of crystal growth 243.1(2002):25-29. |
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