Preparation and Optical Performance of Freestanding GaN Thick Films
Wei TB; Yang JK; Duan RF
刊名rare metal materials and engineering
2010
卷号39期号:12页码:2169-2172
关键词GaN HVPE freestanding thick films stress release photoluminescence VAPOR-PHASE EPITAXY GROWTH PRESSURE HVPE
ISSN号1002-185x
通讯作者hu, qa, chinese acad sci, inst semicond, beijing 100083, peoples r china. huqiang@semi.ac.cn
学科主题半导体材料
收录类别SCI
语种中文
公开日期2011-07-05 ; 2011-07-15
附注high-quality freestanding gan thick films were deposited by hydride vapor phase epitaxy (hvpe) on sapphire wafer with a thin ti film on the top. the fwhm of (0002) peaks in the x-ray rocking curve profile is 260 arcsec. the fwhm of band edge emission peaks at 5 k and room temperature are 3 mev and 20 mev, respectively. the yellow spectral region is not observed at room temperature. the surface morphology of gan films was characterized by scanning electron microscope; results show that hexagonal pits from dislocation extension exist on the surface of freestanding gan thick films after corrosion and their dislocation density is estimated as 2.1 x 10(7) cm(-2). all these results prove that the ti metal interlayer improves the crystalline quality of gan epitaxial layer. the results of raman and pl show that the surface stress of the gan films is released completely. finally, the temperature-dependent pl was investigated; the result also proves that the stress-free freestanding gan thick films have high crystalline quality and optical quality.
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/20825]  
专题半导体研究所_半导体材料科学中心
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GB/T 7714
Wei TB,Yang JK,Duan RF. Preparation and Optical Performance of Freestanding GaN Thick Films[J]. rare metal materials and engineering,2010,39(12):2169-2172.
APA Wei TB,Yang JK,&Duan RF.(2010).Preparation and Optical Performance of Freestanding GaN Thick Films.rare metal materials and engineering,39(12),2169-2172.
MLA Wei TB,et al."Preparation and Optical Performance of Freestanding GaN Thick Films".rare metal materials and engineering 39.12(2010):2169-2172.
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