×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [11]
内容类型
期刊论文 [11]
发表日期
2017 [1]
2008 [1]
2002 [1]
2000 [1]
1999 [3]
1998 [2]
更多...
学科主题
半导体材料 [11]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共11条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition
期刊论文
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
作者:
X. F. Liu
;
z G. G. Yan
;
Z. W. Shen
;
Z. X.Wen
;
L. X. Tian
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2018/06/15
Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 073903
Shi, H
;
Duan, Y
收藏
  |  
浏览/下载:44/2
  |  
提交时间:2010/03/08
HIGH CURIE-TEMPERATURE
SPINODAL-DECOMPOSITION
ROOM-TEMPERATURE
1ST PRINCIPLES
THIN-FILMS
SEMICONDUCTORS
FERROMAGNETISM
STABILIZATION
GROWTH
PHASE
A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 188-194
Chen Z
;
Lu DH
;
Yuan HR
;
Han P
;
Liu XL
;
Li YF
;
Wang XH
;
Lu Y
;
Wang ZG
收藏
  |  
浏览/下载:101/11
  |  
提交时间:2010/08/12
nanostructures
metalorganic chemical vapor deposition
nitrides
GAN BUFFER LAYER
EPITAXIAL-GROWTH
PHASE EPITAXY
SURFACES
TEMPERATURE
DEPENDENCE
MODE
WIRE
The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates
期刊论文
journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208
作者:
Xu B
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/08/12
high-index InP substrate
In(Ca)As nanostructures
MBE
MOLECULAR-BEAM-EPITAXY
INGAAS QUANTUM DOTS
ORIENTED GAAS
OPTICAL CHARACTERIZATION
ISLANDS
Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces
期刊论文
journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 481-488
作者:
Xu B
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/08/12
two-dimensional (2D) ordering
quantum dot array
InxGa1-xAs
self-assembly
molecular beam epitaxy
GaAs(311)B
high-index
CHEMICAL-VAPOR-DEPOSITION
ORGANIZED GROWTH
INAS ISLANDS
GAAS
GAAS(100)
ALIGNMENT
MATRIX
ARRAYS
DISKS
MOLECULAR-BEAM-EPITAXY
Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy
期刊论文
journal of materials science & technology, 1999, 卷号: 15, 期号: 6, 页码: 523-526
作者:
Xu B
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/08/12
INAS ISLANDS
MONOLAYER COVERAGE
SELF-ORGANIZATION
ROOM-TEMPERATURE
SURFACES
Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces
期刊论文
journal of crystal growth, 1999, 卷号: 206, 期号: 4, 页码: 279-286
作者:
Xu B
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/08/12
two-dimensional (2D) ordering
quantum dot array
InxGa1-xAs
self-assembly
molecular beam epitaxy
GaAs(311)B
high index
CHEMICAL-VAPOR-DEPOSITION
ORGANIZED GROWTH
INAS ISLANDS
GAAS
GAAS(100)
ALIGNMENT
MATRIX
DISKS
MOLECULAR-BEAM-EPITAXY
Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy
期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 535-540
Liu JP
;
Kong MY
;
Li JP
;
Liu XF
;
Huang DD
;
Sun DZ
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/08/12
Si1-xGex alloys
low temperature epitaxy
desorption
adsorption
surface morphology
growth kinetics
HYDROGEN DESORPTION
SI(100)
SI
SURFACTANT
GERMANIUM
MECHANISM
KINETICS
ALLOYS
SI2H6
GAS-SOURCE MBE
A study of the interface of CeO2/Si heterostructure grown by ion beam deposition
期刊论文
vacuum, 1998, 卷号: 51, 期号: 3, 页码: 397-401
Wu ZL
;
Huang DD
;
Yang XZ
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
X-RAY PHOTOELECTRON
EPITAXIAL-GROWTH
SILICON
SPECTROSCOPY
SURFACES
SI(111)
OXIDES
LAYERS
SI
CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS
期刊论文
journal of vacuum science & technology a-vacuum surfaces and films, 1991, 卷号: 9, 期号: 3, 页码: 998-1001
HSU CC
;
HO J
;
QIAN JJ
;
WANG YT
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
METAL-SEMICONDUCTOR INTERFACE
SI(111)
LA
©版权所有 ©2017 CSpace - Powered by
CSpace