Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy

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	Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy
	Liu JP ; Kong MY ; Li JP ; Liu XF ; Huang DD ; Sun DZ
刊名	journal of crystal growth
	1998
卷号	193 期号:4 页码:535-540
关键词	Si1-xGex alloys low temperature epitaxy desorption adsorption surface morphology growth kinetics HYDROGEN DESORPTION SI(100) SI SURFACTANT GERMANIUM MECHANISM KINETICS ALLOYS SI2H6 GAS-SOURCE MBE
ISSN号	0022-0248
通讯作者	liu jp,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. 电子邮箱地址: liujp@red.semi.ac.cn
中文摘要	low temperature (similar to 500 degrees c) growth properties of si1-xgex by disilane and solid-ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. it is found that low-temperature growth(<500 degrees c) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large ge composition (>0.5). ge composition dependence on substrate temperature, ge cell temperature and disilane flow rate have been investigated. it is found that in low-temperature growth (less than or equal to 500 degrees c) and under large disilane flux, ge composition increases with the increase of ge flux and further increase of ge flux leads to the saturation of ge composition. similar compositional dependence has been found at different growth temperatures. the saturated composition increases with the decrease of substrate temperature. the results can be explained if h desorption is assumed to occur from both si and ge monohydrides without diffusional exchange and the presence of ge enhances h desorption on a si site. (c) 1998 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13064]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu JP,Kong MY,Li JP,et al. Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy[J]. journal of crystal growth,1998,193(4):535-540.
APA	Liu JP,Kong MY,Li JP,Liu XF,Huang DD,&Sun DZ.(1998).Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy.journal of crystal growth,193(4),535-540.
MLA	Liu JP,et al."Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy".journal of crystal growth 193.4(1998):535-540.