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| Improved field emission properties from metal-coated diamond films 期刊论文 diamond and related materials, 2007, 卷号: 16, 期号: 3, 页码: 650-653 Zhao YM (Zhao Yongmei); Zhang BL (Zhang Binglin); Yao N (Yao Ning); Sun GS (Sun Guosheng); Li JM (Li Jinmin) 收藏  |  浏览/下载:39/0  |  提交时间:2010/03/29
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| Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.602110 作者: Han XX; Wei HY 收藏  |  浏览/下载:710/6  |  提交时间:2010/04/11
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| Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文 applied surface science, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214 作者: Jin P 收藏  |  浏览/下载:458/3  |  提交时间:2010/08/12
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| Strong red light emission from silicon nanocrystals embedded in SIO2 matrix 会议论文 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 Chen WD; Wang YQ; Chen CY; Diao HW; Liao XB; Kong GL; Hsu CC 收藏  |  浏览/下载:8/0  |  提交时间:2010/10/29
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| GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique 期刊论文 journal of crystal growth, 2002, 卷号: 242, 期号: 3-4, 页码: 389-394 Zhou JP; Chen NF; Zhang FQ; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY 收藏  |  浏览/下载:54/0  |  提交时间:2010/08/12
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| Hydrogen contaminant and its correlation with background electrons in GaN 期刊论文 semiconductor science and technology, 1999, 卷号: 14, 期号: 5, 页码: 403-405 Zhang JP; Sun DZ; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载:35/0  |  提交时间:2010/08/12
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| Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 期刊论文 journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 429-432 Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载:31/0  |  提交时间:2010/08/12
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| Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy 期刊论文 vacuum, 1998, 卷号: 49, 期号: 2, 页码: 133-137 Wu Z; Huang D; Yang X; Wang J; Qin F; Zhang J; Yang Z 收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12
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| A study of the interface of CeO2/Si heterostructure grown by ion beam deposition 期刊论文 vacuum, 1998, 卷号: 51, 期号: 3, 页码: 397-401 Wu ZL; Huang DD; Yang XZ 收藏  |  浏览/下载:37/0  |  提交时间:2010/08/12
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| Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy 期刊论文 vacuum, 1998, 卷号: 49, 期号: 2, 页码: 139-143 Yang X; Wu Z; Zhao J; Wang H; Huang D; Qin F 收藏  |  浏览/下载:28/0  |  提交时间:2010/08/12
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