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科研机构
半导体研究所 [20]
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期刊论文 [15]
会议论文 [5]
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2011 [1]
2006 [3]
2004 [1]
2003 [3]
2001 [5]
2000 [3]
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半导体材料 [20]
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 5, 页码: 1251-1254
作者:
Wei HY
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  |  
浏览/下载:61/0
  |  
提交时间:2010/04/11
OPTICAL-PROPERTIES
RAMAN-SCATTERING
EPILAYERS
LUMINESCENCE
ALINGAN
PHONON
LAYERS
FILMS
ALN
GAN
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1841-1846
Liao XB (Liao Xianbo)
;
Du WH (Du Wenhui)
;
Yang XS (Yang Xiesen)
;
Povolny H (Povolny Henry)
;
Xiang XB (Xiang Xianbi)
;
Deng XM (Deng Xunming)
;
Sun K (Sun Kai)
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  |  
浏览/下载:179/0
  |  
提交时间:2010/04/11
amorphous semiconductors
solar cells
microstructure
OPEN-CIRCUIT VOLTAGE
MICROCRYSTALLINE SILICON
DISCONTINUITIES
FILMS
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903
Hu ZH (Hu Zhihua)
;
Liao XB (Liao Xianbo)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
silicon
solar cells
photovoltaics
Raman scattering
MICROCRYSTALLINE SILICON
SI NANOCRYSTALS
VOLUME FRACTION
RAMAN
CRYSTALLINITY
FILMS
Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
期刊论文
journal of crystal growth, 2004, 卷号: 265, 期号: 1-2, 页码: 60-64
Zhang, CL
;
Wang, ZG
;
Zhao, FA
;
Xu, B
;
Jin, P
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  |  
浏览/下载:212/52
  |  
提交时间:2010/03/09
line defects
High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
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  |  
浏览/下载:31/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ION-SCATTERING SPECTROSCOPY
LATTICE POLARITY
SINGLE-CRYSTALS
FILMS
POLARIZATION
GAN(0001)
SURFACES
GROWTH
DIODES
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate
期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959
作者:
Xu B
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  |  
浏览/下载:73/0
  |  
提交时间:2010/08/12
RELAXATION
SI
HETEROSTRUCTURES
KINETICS
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 399-403
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:85/11
  |  
提交时间:2010/08/12
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
Epitaxial growth of SiC on complex substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
optical microscopy
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
SAPPHIRE
DEPOSITION
FILMS
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