CORC

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Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 7, 页码: 2657-2660
Li, J; Wang, RZ; Lan, W; Zhang, XW; Duan, ZQ; Wang, B; Yan, H
收藏  |  浏览/下载:53/2  |  提交时间:2010/03/08
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.); Li CJ (Li C. J.)
收藏  |  浏览/下载:47/0  |  提交时间:2010/04/11
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.)
收藏  |  浏览/下载:43/0  |  提交时间:2010/04/11
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL
收藏  |  浏览/下载:25/0  |  提交时间:2010/08/12
Epitaxial growth of SiC on complex substrates 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Epitaxial growth of SiC on complex substrates 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 811-815
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY
收藏  |  浏览/下载:95/9  |  提交时间:2010/08/12
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏  |  浏览/下载:93/3  |  提交时间:2010/08/12
TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy 期刊论文
defect and diffusion forum, 1999, 卷号: 174, 期号: 0, 页码: 59-65
作者:  Han PD
收藏  |  浏览/下载:39/0  |  提交时间:2010/08/12
Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 3-4, 页码: 376-380
作者:  Xu B
收藏  |  浏览/下载:33/0  |  提交时间:2010/08/12
SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON 期刊论文
journal of applied physics, 1991, 卷号: 70, 期号: 7, 页码: 3802-3807
RIZK R; DEMIERRY P; SONG C; BALLUTAUD D; PAJOT B
收藏  |  浏览/下载:16/0  |  提交时间:2010/11/15


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