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科研机构
半导体研究所 [10]
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期刊论文 [9]
会议论文 [1]
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2008 [1]
2006 [2]
2003 [1]
2001 [3]
1999 [1]
1998 [1]
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半导体材料 [10]
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Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 7, 页码: 2657-2660
Li, J
;
Wang, RZ
;
Lan, W
;
Zhang, XW
;
Duan, ZQ
;
Wang, B
;
Yan, H
收藏
  |  
浏览/下载:53/2
  |  
提交时间:2010/03/08
CVD DIAMOND FILMS
WORK FUNCTION
PHOTOCATALYTIC ACTIVITY
AQUEOUS SUSPENSION
THIN-FILMS
DEGRADATION
MICROSCOPY
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.)
;
Li CJ (Li C. J.)
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  |  
浏览/下载:47/0
  |  
提交时间:2010/04/11
DLTS
defects
detectors
sensors
current transient
SILICON DETECTORS
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
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  |  
浏览/下载:43/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
Epitaxial growth of SiC on complex substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
optical microscopy
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
SAPPHIRE
DEPOSITION
FILMS
Epitaxial growth of SiC on complex substrates
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 811-815
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
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  |  
浏览/下载:95/9
  |  
提交时间:2010/08/12
optical microscopy
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
SAPPHIRE
DEPOSITION
FILMS
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands
期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD
;
Niu ZC
;
Feng SL
;
Miao ZH
收藏
  |  
浏览/下载:93/3
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
optical microscopy
molecular beam epitaxy
nanomaterials
semiconducting III-V materials
laser diodes
TEMPERATURE-DEPENDENCE
M PHOTOLUMINESCENCE
INGAAS OVERGROWTH
GAAS
DOTS
EMISSION
ENERGY
LASER
TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy
期刊论文
defect and diffusion forum, 1999, 卷号: 174, 期号: 0, 页码: 59-65
作者:
Han PD
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/08/12
HREM
large-angle stereo-projection
misfit dislocations
stacking faults
TEM
LAYER
SUPERLATTICES
ELECTRON-MICROSCOPY
Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 3-4, 页码: 376-380
作者:
Xu B
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/08/12
nanometer island
InAs
molecular beam epitaxy
atomic force microscopy
quantum dot
GAAS
LASERS
GROWTH
ASSEMBLED QUANTUM DOTS
SPECTROSCOPIC INVESTIGATION OF HYDROGEN-DOPANT COMPLEXES IN BULK P-TYPE AND IMPLANTED N-TYPE CRYSTALLINE SILICON
期刊论文
journal of applied physics, 1991, 卷号: 70, 期号: 7, 页码: 3802-3807
RIZK R
;
DEMIERRY P
;
SONG C
;
BALLUTAUD D
;
PAJOT B
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  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
MICROSCOPIC STRUCTURE
ACCEPTOR PAIRS
DOPED SILICON
BORON
DEFECT
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