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CORC

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Silicon thin films prepared in the transition region and their use in solar cells 期刊论文
solar energy materials and solar cells, 2006, 卷号: 90, 期号: 18-19, 页码: 3001-3008
Zhang S (Zhang S.); Liao X (Liao X.); Raniero L (Raniero L.); Fortunato E (Fortunato E.); Xu Y (Xu Y.); Kong G (Kong G.); Aguas H (Aguas H.); Ferreira I (Ferreira I.); Martins R (Martins R.)
收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11
Silicon thin films prepared in the transition region and their use in solar cells 会议论文
14th international photovoltaic science and engineering conference, bangkok, thailand, jan 27-feb 01, 2004
Zhang S; Liao X; Raniero L; Fortunato E; Xu Y; Kong G; Aguas H; Ferreira I; Martins R
收藏  |  浏览/下载：153/25  |  提交时间：2010/03/29
Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon 期刊论文
journal of crystal growth, 2005, 卷号: 281, 期号: 2-4, 页码: 344-348
Hao, HY; Liao, XB; Zeng, XB; Diao, HW; Xu, Y; Kong, GL
收藏  |  浏览/下载：47/14  |  提交时间：2010/03/17
Characterization of polymorphous silicon thin film and solar cells 会议论文
2nd international materials symposium, caparica, portugal, apr 14-16, 2003
Zhang S; Xu Y; Liao X; Martins R; Fortunato E; Hu Z; Kong G
收藏  |  浏览/下载：22/1  |  提交时间：2010/10/29
Improved diphasic nc-si/a-si : H I-layer materials using PECVD 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Hao, HY; Zhang, SB; Xu, YY; Zeng, XB; Diao, HW; Kong, GL; Liao, XB
收藏  |  浏览/下载：214/78  |  提交时间：2010/03/29
Characterization of polymorphous silicon thin film and solar cells 期刊论文
advanced materials forum ii, 2004, 卷号: 455-456, 期号: 0, 页码: 77-80
Zhang, S; Xu, Y; Liao, X; Martins, R; Fortunato, E; Hu, Z; Kong, G
收藏  |  浏览/下载：138/36  |  提交时间：2010/03/09
Characterization of diphasic nc-Si/a-Si : H thin films and solar cells 会议论文
29th ieee photovoltaic specialists conference, new orleans, la, may 19-24, 2002
Zhang SB; Xu YY; Hu ZH; Wang YQ; Zeng XB; Diao HW; Wang WJ; Kong GL; Liao XB
收藏  |  浏览/下载：22/7  |  提交时间：2010/10/29
SILICON  RAMAN  
Indium doping effect on GaN in the initial growth stage 期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:  Han PD
收藏  |  浏览/下载：155/29  |  提交时间：2010/08/12
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 期刊论文
journal of crystal growth, 2000, 卷号: 221, 期号: 0, 页码: 356-361
Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH
收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文
10th international conference on metalorganic vapor phase epitaxy (icmovpe-x), sapporo, japan, jun 05-09, 2000
Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15

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