Improved diphasic nc-si/a-si : H I-layer materials using PECVD

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	Improved diphasic nc-si/a-si : H I-layer materials using PECVD
	Hao, HY ; Zhang, SB ; Xu, YY ; Zeng, XB ; Diao, HW ; Kong, GL ; Liao, XB
	2004
会议名称	7th international conference on solid-state and integrated circuits technology
会议日期	oct 18-21, 2004
会议地点	beijing, peoples r china
关键词	OPEN-CIRCUIT VOLTAGE SILICON SOLAR-CELLS AMORPHOUS-SILICON ABSORPTION
页码	vols 1- 3 proceedings: 2025-2028
通讯作者	hao, hy, chinese acad sci, inst semicond, ctr condensed matter phys, state lab surface phys, beijing 100083, peoples r china.
中文摘要	two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (pecvd) in the region adjacent to the phase transition from amorphous to crystalline state. the photoelectronic properties of the films have been investigated as a function of crystalline fraction. in comparison with typical a-si:h, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( lt) and higher stability upon light soaking. by using the diphasic nc-si/a-si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (am 1.5, 100 mw/cm(2)).
英文摘要	two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (pecvd) in the region adjacent to the phase transition from amorphous to crystalline state. the photoelectronic properties of the films have been investigated as a function of crystalline fraction. in comparison with typical a-si:h, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( lt) and higher stability upon light soaking. by using the diphasic nc-si/a-si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (am 1.5, 100 mw/cm(2)).; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:34z (gmt). no. of bitstreams: 1 2436.pdf: 133078 bytes, checksum: 0d8aa674ecbd34dbf4bad90843ada76c (md5) previous issue date: 2004; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, inst semicond, ctr condensed matter phys, state lab surface phys, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.
会议录	2004 7th international conference on solid-state and integrated circuits technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-8511-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10106]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Hao, HY,Zhang, SB,Xu, YY,et al. Improved diphasic nc-si/a-si : H I-layer materials using PECVD[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004.