In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

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	In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
	Lu DC ; Wang CX ; Yuan HR ; Liu XL ; Wang XH
	2000
会议名称	10th international conference on metalorganic vapor phase epitaxy (icmovpe-x)
会议日期	jun 05-09, 2000
会议地点	sapporo, japan
关键词	GaN annealing treatment In-doping MOVPE photoluminescence CHEMICAL-VAPOR-DEPOSITION PHASE EPITAXY BUFFER LAYER FILMS SAPPHIRE
页码	356-361
通讯作者	lu dc chinese acad sci inst semicond lab semicond mat & sci pob 912 beijing 100083 peoples r china.
中文摘要	the effects of in situ annealing treatment in the initial growth stage and in-doping during growth of the gan on the material properties were investigated. gan was grown by lp-movpe. in situ annealing reduced the full-width at half-maximum (fwhm) of x-ray rocking curves and reduced etch pit density of gan films. it improved the optical properties of the epilayer. undoped and in-doped gan films of initial growth stage were investigated. it was found that morphology and optical properties were improved in in-doped samples. (c) 2000 elsevier science b.v. all rights reserved.
英文摘要	the effects of in situ annealing treatment in the initial growth stage and in-doping during growth of the gan on the material properties were investigated. gan was grown by lp-movpe. in situ annealing reduced the full-width at half-maximum (fwhm) of x-ray rocking curves and reduced etch pit density of gan films. it improved the optical properties of the epilayer. undoped and in-doped gan films of initial growth stage were investigated. it was found that morphology and optical properties were improved in in-doped samples. (c) 2000 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:21导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:21z (gmt). no. of bitstreams: 1 2926.pdf: 438447 bytes, checksum: 3736e9e4675a25b299d06c02f2cc98ad (md5) previous issue date: 2000; japan soc appl phys.; res ctr interface quantum electr.; hokkaido univ.; asahi glass fdn.; casio sci promot fdn.; fdn promot mat sci & technol japan.; inoue fdn sci.; izumi fdn sci & technol.; nippon steel glass fdn mat sci.; ogasawara fdn sci & technol.; sapporo city int plaza.; air water corp.; aixtron ag.; daido air prod electr co ltd.; eiko engn corp.; emf ltd.; epichem ltd.; furukawa elect corp.; hitachi ltd.; hitachi cable ltd.; hitachi plant engn & construct co ltd.; int quantum epitaxy plc.; kyoto semicond corp.; matsushita elect ind co ltd.; mitsubishi chem co ltd.; mochem gmbh.; nec corp.; nichic chem co ltd.; nippon sanso corp.; ntt bas res lab.; oki elect ind co ltd.; rohm co ltd.; sony corp.; sumitomo elect ind ltd.; toshiba corp.; toyada gossei co ltd.; ube ind ltd.; chinese acad sci, inst semicond, lab semicond mat & sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc appl phys.; res ctr interface quantum electr.; hokkaido univ.; asahi glass fdn.; casio sci promot fdn.; fdn promot mat sci & technol japan.; inoue fdn sci.; izumi fdn sci & technol.; nippon steel glass fdn mat sci.; ogasawara fdn sci & technol.; sapporo city int plaza.; air water corp.; aixtron ag.; daido air prod electr co ltd.; eiko engn corp.; emf ltd.; epichem ltd.; furukawa elect corp.; hitachi ltd.; hitachi cable ltd.; hitachi plant engn & construct co ltd.; int quantum epitaxy plc.; kyoto semicond corp.; matsushita elect ind co ltd.; mitsubishi chem co ltd.; mochem gmbh.; nec corp.; nichic chem co ltd.; nippon sanso corp.; ntt bas res lab.; oki elect ind co ltd.; rohm co ltd.; sony corp.; sumitomo elect ind ltd.; toshiba corp.; toyada gossei co ltd.; ube ind ltd.
会议录	journal of crystal growth, 221
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14961]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu DC,Wang CX,Yuan HR,et al. In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE[C]. 见:10th international conference on metalorganic vapor phase epitaxy (icmovpe-x). sapporo, japan. jun 05-09, 2000.