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科研机构
半导体研究所 [11]
内容类型
期刊论文 [9]
会议论文 [2]
发表日期
2011 [3]
2007 [1]
2006 [1]
2003 [2]
2001 [2]
1998 [1]
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半导体材料 [11]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
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  |  
浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun)
;
Han XX (Han Xiuxun)
;
Li JM (Li Jiemin)
;
Wei HY (Wei Hongyuan)
;
Cong GW (Cong Guangwei)
;
Liu XL (Liu Xianglin)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
;
Jia QJ (Jia Quanjie)
;
Guo LP (Guo Liping)
;
Hu TD (Hu Tiandou)
;
Wang HH (Wang Huanhua)
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
in doping
cracks
Si(111) substrate
LT-AlGaN interlayer
metalorganic chemical vapor deposition
GaN
PHASE EPITAXY
INDIUM-SURFACTANT
OPTICAL-PROPERTIES
SI(111)
STRESS
FILMS
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
The growth morphologies of GaN layer on Si(111) substrate
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA
;
Liu XL
;
Lu DC
;
Yuan HR
;
Hu GQ
;
Wang XH
;
Wang ZG
;
Duan XF
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/08/12
Si(111) substrate
heteroepitaxy
metalorganic chemical vapor deposition
GaN
LIGHT-EMITTING-DIODES
CHEMICAL-VAPOR-DEPOSITION
NUCLEATION LAYERS
BUFFER LAYER
SILICON
SAPPHIRE
NITRIDE
EPITAXY
STRESS
STRAIN
Hydrogen behavior in GaN epilayers grown by NH3-MBE
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:99/8
  |  
提交时间:2010/08/12
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Rapid thermal annealing processing of GaN epilayer on sapphire(0 0 0 1)
期刊论文
journal of crystal growth, 1998, 卷号: 186, 期号: 1-2, 页码: 298-301
Li XB
;
Sun DZ
;
Kong MY
;
Yoon SF
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/08/12
CHEMICAL-VAPOR-DEPOSITION
LIGHT-EMITTING-DIODES
EPITAXIAL-GROWTH
LAYERS
GAAS
FILMS
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