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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications 期刊论文 人工晶体学报, 2005, 卷号: 34, 期号: 6, 页码: 982-985 作者:  LIU Xingfang 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23 Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：206/60  |  提交时间：2010/03/29 4H-SiC  LPCVD homoepitaxial growth  thermal oxidization  MOS structures  HOT-WALL CVD   Electrical properties and electroluminescence of 4H-SiC p-n junction diodes 期刊论文 journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278 Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：87/0  |  提交时间：2010/03/17 4H-SiC   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 816-819 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：79/6  |  提交时间：2010/08/12 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   The effects of carbonized buffer layer on the growth of SiC on Si 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Wang YS; Li JM; Zhang FF; Lin LY 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 HETEROEPITAXIAL GROWTH  HYDROCARBON RADICALS  SI(001) SURFACE  BEAM   The effects of carbonized buffer layer on the growth of SiC on Si 期刊论文 journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 564-567 Wang YS; Li JM; Zhang FF; Lin LY 收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12 Si  SiC  carbonization  RHEED  single crystal epilayer  HYDROCARBON RADICALS  SI(001) SURFACE  BEAM  HETEROEPITAXIAL GROWTH