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科研机构
半导体研究所 [16]
内容类型
期刊论文 [16]
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2011 [2]
2010 [1]
2006 [3]
2005 [1]
2003 [1]
2001 [1]
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半导体材料 [16]
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学科主题:半导体材料
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Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:
Shi K
;
Jiao CM
;
Song HP
收藏
  |  
浏览/下载:94/7
  |  
提交时间:2011/07/05
Valence band offset
GaN/diamond heterojunction
XPS
Conduction band offset
CHEMICAL-VAPOR-DEPOSITION
ALGAN/GAN HEMTS
DIAMOND
GAN
FILMS
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
收藏
  |  
浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.)
;
Huang AP (Huang A. P.)
;
Xiao ZS (Xiao Z. S.)
;
Yang ZC (Yang Z. C.)
;
Wang M (Wang M.)
;
Zhang XW (Zhang X. W.)
;
Wang WW (Wang W. W.)
;
Chu PK (Chu Paul K.)
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/14
OXYGEN
GATE
DIFFUSION
FILMS
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Liu XF (Liu Xing-Fang)
;
Sun GS (Sun Guo-Sheng)
;
Li JM (Li Jin-Min)
;
Zhao YM (Zhao Yong-Mei)
;
Li JY (Li Jia-Ye)
;
Wang L (Wang Lei)
;
Zhao WS (Zhao Wan-Shun)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2010/04/11
SPECTROSCOPY
GROWTH
POLYTYPES
SILICON
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.)
;
Wu J (Wu J.)
;
Xu B (Xu B.)
;
Jin P (Jin P.)
;
Hu LJ (Hu L. J.)
;
Liang LY (Liang L. Y.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
metamorphic
long wavelength
quantum dots
molecular beam epitaxy
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
1.3 MU-M
GAAS
EMISSION
RANGE
ISLANDS
ARRAYS
LASERS
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:
Ye XL
;
Xu B
;
Jin P
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  |  
浏览/下载:90/0
  |  
提交时间:2010/04/11
GAAS
SPECTROSCOPY
PARAMETERS
TRANSPORT
LASERS
ENERGY
STATES
HOLE
Study on growth mechanism of low-temperature prepared microcrystalline Si thin films
期刊论文
acta physica sinica, 2005, 卷号: 54, 期号: 4, 页码: 1890-1894
Gu, JH
;
Zhou, YQ
;
Zhu, MF
;
Li, GH
;
Kun, D
;
Zhou, BQ
;
Liu, FZ
;
Liu, JL
;
Zhang, QF
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/17
growth mechanism
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW
;
Zhao YW
;
Zeng YP
;
Jiao JH
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
diffusion
interfaces
substrates
molecular beam epitaxy
phosphides
semiconducting indium phosphide
UNDOPED SEMIINSULATING INP
CHEMICAL-VAPOR-DEPOSITION
PHOSPHIDE VAPOR
FE
INTERFACE
PHOTOLUMINESCENCE
WAFER
UNIFORMITY
DIFFUSION
PRESSURE
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 516-520
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
收藏
  |  
浏览/下载:82/10
  |  
提交时间:2010/08/12
adsorption
characterization
radiation
molecular beam epitaxy
nitrides
SURFACE-EMITTING LASER
QUANTUM-WELLS
OPERATION
RANGE
Quasi-thermodynamic analysis of MOVPE of AlGaN
期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 73-78
Lu DC
;
Duan S
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
AlGaN
thermodynamic
MOVPE
aluminium content
VAPOR-PHASE EPITAXY
GROWTH
NITRIDE
REGION
ALLOYS
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