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科研机构
半导体研究所 [10]
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会议论文 [10]
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2008 [1]
2007 [1]
2006 [2]
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半导体材料 [10]
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内容类型:会议论文
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Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/09
bulge test fracture property
silicon carbide thin films
Weibull distribution function
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Liu, Z
;
Wang, JX
;
Wang, XL
;
Hu, GX
;
Guo, LC
;
Liu, HX
;
Li, JP
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:222/40
  |  
提交时间:2010/03/29
surface morphology
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
作者:
Xu B
收藏
  |  
浏览/下载:134/15
  |  
提交时间:2010/03/29
Monte Carlo simulation
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:135/48
  |  
提交时间:2010/03/29
SI(111)
ALN
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Influence of precipitates on GaN epilayer quality
会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY
;
Huang QS
;
Wang ZG
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
precipitate
GaN
WDS
TEM
cathodoluminescence
VAPOR-PHASE EPITAXY
FILMS
MECHANISM
GROWTH
Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)
会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Zhu JJ
;
Liu SY
;
Liang JW
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2010/11/15
Raman spectrum
thin film
chemical vapor deposition
SCATTERING
SI
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface
会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP
;
Sun DZ
;
Li XB
;
Wang XL
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2010/11/15
STRESS
GROWTH
Twin and grain boundary in InP: A synchrotron radiation study
会议论文
symposium on applications of synchrotron radiation techniques to materials science iv, san francisco, ca, apr 13-17, 1998
Han YJ
;
Jiang JH
;
Wang ZG
;
Liu XL
;
Jiao JH
;
Tian YL
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
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