Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

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	Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
	Xu B
	2006
会议名称	11th conference on defects recognition imaging and physics in semiconductors
会议日期	sep 13-19, 2005
会议地点	beijing, peoples r china
关键词	Monte Carlo simulation
页码	9 (1-3): 31-35
通讯作者	zhao, c, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: czhao@semi.ac.cn
中文摘要	performing an event-based continuous kinetic monte carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (qds). the relative positions between the qds and the dislocations are studied. the stress effects to the growth of the qds are considered in simulation. the simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor qds. (c) 2006 elsevier ltd. all rights reserved.
英文摘要	performing an event-based continuous kinetic monte carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (qds). the relative positions between the qds and the dislocations are studied. the stress effects to the growth of the qds are considered in simulation. the simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor qds. (c) 2006 elsevier ltd. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; beijing inst petrochem & technol, dept math & phys, beijing 102617, peoples r china
收录类别	CPCI（ISTP）
会议录	materials science in semiconductor processing
会议录出版者	elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england
会议录出版地	the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england
学科主题	半导体材料
语种	英语
ISSN号	1369-8001
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9992]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth[C]. 见:11th conference on defects recognition imaging and physics in semiconductors. beijing, peoples r china. sep 13-19, 2005.