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科研机构
半导体研究所 [7]
内容类型
会议论文 [7]
发表日期
2003 [1]
2001 [3]
2000 [2]
1999 [1]
学科主题
半导体材料 [7]
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学科主题:半导体材料
内容类型:会议论文
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High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ION-SCATTERING SPECTROSCOPY
LATTICE POLARITY
SINGLE-CRYSTALS
FILMS
POLARIZATION
GAN(0001)
SURFACES
GROWTH
DIODES
Epitaxial growth of SiC on complex substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
optical microscopy
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
SAPPHIRE
DEPOSITION
FILMS
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM
;
Sun GS
;
Zhu SR
;
Wang L
;
Luo MC
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
LOW-TEMPERATURE GROWTH
FILMS
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/11/15
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
会议论文
10th international conference on metalorganic vapor phase epitaxy (icmovpe-x), sapporo, japan, jun 05-09, 2000
Lu DC
;
Wang CX
;
Yuan HR
;
Liu XL
;
Wang XH
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
GaN
annealing treatment
In-doping
MOVPE
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
BUFFER LAYER
FILMS
SAPPHIRE
Influence of precipitates on GaN epilayer quality
会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY
;
Huang QS
;
Wang ZG
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
precipitate
GaN
WDS
TEM
cathodoluminescence
VAPOR-PHASE EPITAXY
FILMS
MECHANISM
GROWTH
Preparation and characterization of erbium doped sol-gel silica glasses
会议论文
conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999
Lei HB
;
Yang QQ
;
Ou HY
;
Chen BW
;
Yu JZ
;
Wang QM
;
Xie DT
;
Wu JG
;
Xu DF
;
Xu GX
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
Er-doped silica glass
sol-gel process
photoluminescence
PLANAR WAVE-GUIDES
MOLECULAR-BEAM EPITAXY
CRYSTAL SILICON
IMPLANTED SI
LUMINESCENCE
ELECTROLUMINESCENCE
FABRICATION
IMPURITIES
FILMS
IONS
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