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CORC

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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29
Growth and photoluminescence of InAlGaN films 会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
作者:  Li DB
收藏  |  浏览/下载：13/2  |  提交时间：2010/10/29
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15
Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers 会议论文
5th international conference on diffusion in materials, paris, france, jul 17-21, 2000
Wang WK; Zhao JH
收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文
international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999
作者:  Yu F
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
作者:  Zhang JY;  Jiang DS
收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
作者:  Xu B
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15
STRESS  GROWTH  
Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers 会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
Zhuang QD; Li JM; Zeng YP; Pan L; Chen YH; Kong MY; Lin LY
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15

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