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CORC

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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM
收藏  |  浏览/下载：64/3  |  提交时间：2011/07/05
Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 68103
Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM
收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping); Sun Y (Sun Yuanping); Cho YH (Cho Yong-Hoon); Wang H (Wang Hui); Wang LL (Wang Lili); Zhang SM (Zhang Shuming); Yang H (Yang Hui)
收藏  |  浏览/下载：513/2  |  提交时间：2010/08/17
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：89/41  |  提交时间：2010/03/08
MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 734-739
作者:  Pan JQ
收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11
650nm AlGaInP quantum well lasers for the application of DVD 会议论文
spie conference on photonics technology into the 21st century - semiconductors, microstructures, and nanostructures, singapore, singapore, dec 01-03, 1999
Chen LH; Ma XY; Guo L; Ma J; Ding HY; Cao Q; Wang LM; Zhang GZ; Yang YL; Wang GH; Tan MQ
收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29
Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation 期刊论文
ieee photonics technology letters, 1999, 卷号: 11, 期号: 1, 页码: 3-5
Jie WZ; Jin CS; Fan Z; Jie WX; Wei W; Han WR
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12
High brightness AlGaInP orange light emitting diodes 会议论文
conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998
Li YZ; Wang GH; Ma XY; Peng HI; Wang ST; Chen LH
收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29

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