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科研机构
半导体研究所 [17]
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期刊论文 [16]
会议论文 [1]
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2010 [1]
2009 [2]
2008 [3]
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光电子学 [17]
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Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method
期刊论文
journal of luminescence, 2010, 卷号: 130, 期号: 3, 页码: 411-414
作者:
Xue CL
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浏览/下载:28/0
  |  
提交时间:2010/04/05
Erbium silicate
Photoluminescence
Si photonics
WAVE-GUIDE AMPLIFIERS
CRYSTALLINE FILMS
ERBIUM SILICATE
ENERGY-TRANSFER
SI
ER3+
EXCITATION
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD
期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:
Li Y
;
Chen P
;
Jiang DS
;
Wang H
;
Wang ZG
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  |  
浏览/下载:49/4
  |  
提交时间:2010/03/08
InN
dislocation
carrier origination
localization
Photostability of single-photon emission from a single quantum dot in the 650-nm wavelength band at room temperature
期刊论文
applied physics b-lasers and optics, 2009, 卷号: 94, 期号: 4, 页码: 577-583
Xu X
;
Yamada T
;
Otomo A
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  |  
浏览/下载:387/72
  |  
提交时间:2010/03/08
FLUORESCENCE
NANOCRYSTALS
GENERATION
MOLECULE
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121
Liu, HY
;
Meng, ZM
;
Dai, QF
;
Wu, LJ
;
Guo, Q
;
Hu, W
;
Liu, SH
;
Lan, S
;
Yang, T
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  |  
浏览/下载:54/3
  |  
提交时间:2010/03/08
ENERGY RELAXATION
ELECTRON RELAXATION
CAPTURE
PHONON
INAS
GAAS
TEMPERATURE
DEPENDENCE
DENSITY
TIME
Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 3, 页码: 633-636
作者:
Xu B
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浏览/下载:34/4
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提交时间:2010/03/08
quantum dot
Distinct two dimensional lateral ordering of self-assembled quantum dots
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 6, 页码: 1952-1954
作者:
Ma WQ
;
Jiang DS
;
Chen LH
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  |  
浏览/下载:51/3
  |  
提交时间:2010/03/08
lateral ordering
Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
期刊论文
journal of crystal growth, 2007, 卷号: 309, 期号: 2, 页码: 140-144
Lin, T
;
Zheng, K
;
Wang, CL
;
Ma, XY
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  |  
浏览/下载:38/3
  |  
提交时间:2010/03/08
diffusion
metalorganic vapor phase epitaxy
semiconducting III-V materials
laser diodes
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:
Zhang SM
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  |  
浏览/下载:84/0
  |  
提交时间:2010/04/11
nitrides
multiple quantum wells
cracks
dislocations
vacancies x-ray diffraction
X-RAY-DIFFRACTION
EDGE DISLOCATIONS
GAN
FILMS
SUPERLATTICES
RELAXATION
STRAIN
Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2183-2186
Zhang JG (Zhang Jian-Guo)
;
Wang XX (Wang Xiao-Xin)
;
Cheng BW (Cheng Bu-Wen)
;
Yu JZ (Yu Jin-Zhong)
;
Wang QM (Wang Qi-Ming)
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  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
SI-NANOCRYSTALS
MU-M
ENERGY-TRANSFER
RICH SIO2
LUMINESCENCE
EXCITATION
EMISSION
IONS
FLUORESCENCE
WAVELENGTH
Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 2, 页码: art.no.023513
Zhao HQ (Zhao Hong-Quan)
;
Yu LJ (Yu Li-Juan)
;
Huang YZ (Huang Yong-Zhen)
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  |  
浏览/下载:32/0
  |  
提交时间:2010/04/11
ACTIVATED BONDING METHOD
ROOM-TEMPERATURE
EPITAXIAL OVERGROWTHS
SURFACE
CRYSTAL
GAAS
TECHNOLOGY
ENERGY
FILMS
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