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浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：128/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Study of GaN epilayers growth on freestanding Si cantilevers 期刊论文 solid-state electronics, 2010, 卷号: 54, 期号: 1, 页码: 4-7 Chen J; Wang X; Wu AM; Zhang B; Wang X; Wu YX; Zhu JJ; Yang H 收藏  |  浏览/下载：73/0  |  提交时间：2010/04/04 FABRICATION  SILICON  MEMS  NITRIDE   Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804 Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui) 收藏  |  浏览/下载：66/0  |  提交时间：2010/08/17 in-plane grazing incidence x-ray diffraction  gallium nitride  mosaic structure  biaxial strain  CHEMICAL-VAPOR-DEPOSITION  LATTICE-CONSTANTS  ALN   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255 Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 STRESS   Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914 Liu W; Zhu JJ; Jiang S; Yang H; Wang JF 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文 materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419 Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui) 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/29 chemical vapor deposition   Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate 期刊论文 applied physics a-materials science & processing, 2007, 卷号: 89, 期号: 1, 页码: 177-181 Sun J; Chen J; Wang X; Wang J; Liu W; Zhu J; Yang H 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/29 GROWTH   Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050 作者:  Zhang SM 收藏  |  浏览/下载：84/0  |  提交时间：2010/04/11 nitrides  multiple quantum wells  cracks  dislocations  vacancies x-ray diffraction  X-RAY-DIFFRACTION  EDGE DISLOCATIONS  GAN  FILMS  SUPERLATTICES  RELAXATION  STRAIN   Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105 Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  STRESS EVOLUTION  DEFECT STRUCTURE  EPITAXIAL GAN  THIN-FILMS  ALGAN  DISLOCATIONS  RELAXATION  REDUCTION