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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie 收藏  |  浏览/下载：74/0  |  提交时间：2019/11/10 Single-event multiple-cell upsets (MCUs)  static random access memory  total ionizing dose (TID)   130nm部分耗尽绝缘体上硅工艺晶体管总剂量效应及模型研究 学位论文 中国科学院新疆理化技术研究所: 中国科学院大学, 2019 作者:  席善学 收藏  |  浏览/下载：12/0  |  提交时间：2019/07/15 总剂量效应  部分耗尽  浅槽隔离  模型   Effects of total ionizing dose on single event effect sensitivity of FRAMs 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7 作者:  Ji, Qinggang;  Liu, Jie;  Li, Dongqing;  Liu, Tianqi;  Ye, Bing 收藏  |  浏览/下载：54/0  |  提交时间：2019/11/10 Ferroelectric random access memory  Total ionizing dose  Single event effect  TCAD simulation   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ] 收藏  |  浏览/下载：99/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Impact of TID on latch up induced by pulsed irradiation in CMOS circuits 期刊论文 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019, 卷号: 440, 页码: 95-100 作者:  Li, Ruibin;  He, Chaohui;  Chen, Wei;  Li, Junlin;  Wang, Chenhui 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/19 Base recombination currents  Dose rate  Latch-ups  Oxide trapped charge  Pulsed irradiation  Shallow trench isolation  Surface recombinations  Total Ionizing Dose   Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors 期刊论文 IEEE Access, 2019, 卷号: Vol.7, 页码: 79989-79996 作者:  Shuyun Zheng;  Yun Zeng;  Zhuojun Chen 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/13 Field effect transistors  Semiconductor device modeling  Degradation  Electric potential  Logic gates  Molybdenum  Transition metal dichalcogenide (TMD)  field-effect transistor (FET)  total ionizing dose (TID)  surface potential  compact model   Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors 期刊论文 IEEE ACCESS, 2019, 卷号: Vol.7, 页码: 79989-79996 作者:  Zheng, SY;  Zeng, Y;  Chen, ZJ 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/17 Transition metal dichalcogenide (TMD)  field-effect transistor (FET)  total ionizing dose (TID)  surface potential  compact model   Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715 作者:  Shu, Lei;  Wang, Liang;  Zhou, Xin;  Li, Tong-De;  Yuan, Zhang-Yi'an 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)  BVDS variations  laterally diffused metal-oxide-semiconductor (LDMOS)  radiation effects  SOI  technology computer-aided design (TCAD) simulations  total ionizing dose (TID)   The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 期号: 9, 页码: 1-5 作者:  Xu, YN (Xu, Yannan)[ 1,2 ];  Bi, JS (Bi, Jinshun)[ 1,2 ];  Li, YD (Li, Yudong)[ 3 ];  Xi, K (Xi, Kai)[ 1 ];  Fan, LJ (Fan, Linjie)[ 4 ] 收藏  |  浏览/下载：9/0  |  提交时间：2020/01/19