The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer

doi:10.1016/j.microrel.2019.06.047

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 固体辐射物理研究室

	The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer
	Xu, YN (Xu, Yannan)[ 1,2 ]; Bi, JS (Bi, Jinshun)[ 1,2 ]; Li, YD (Li, Yudong)[ 3 ]; Xi, K (Xi, Kai)[ 1 ]; Fan, LJ (Fan, Linjie)[ 4 ]; Liu, M (Liu, Ming)[ 1 ]; Sandip, M (Sandip, M.)[ 5 ]; Luo, L (Luo, Li)[ 6 ]
刊名	MICROELECTRONICS RELIABILITY
	2019
卷号	100 期号:9 页码:1-5
ISSN号	0026-2714
DOI	10.1016/j.microrel.2019.06.047
英文摘要	The total ionizing dose (TID) effects of X-ray irradiation on graphene/HfO2/Si (Gr/HfO2/Si) Schottky diodes were investigated. The I-V characteristics were studied in detail with different bias conditions during TID irradiation. An increase in the ideality factor and decrease in the Schottky barrier height were observed. Compared with traditional graphene/Si (Gr/Si) Schottky structures, the degradation of electrical characteristics can be effectively suppressed by adding a HfO2 insertion layer between graphene and the Si substrate.
WOS记录号	WOS:000503907900149
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/7215]
专题	固体辐射物理研究室
作者单位	1.Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing, Peoples R China 2.ICFAI Univ, Dept Sci & Technol, Agartala, India 3.Sichuan Univ, Sch Phys Sci & Technol, Chengdu, Sichuan, Peoples R China 4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi, Xinjiang, Peoples R China 5.Univ Chinese Acad Sci, Beijing, Peoples R China 6.Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Xu, YN ,Bi, JS ,Li, YD ,et al. The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer[J]. MICROELECTRONICS RELIABILITY,2019,100(9):1-5.
APA	Xu, YN .,Bi, JS .,Li, YD .,Xi, K .,Fan, LJ .,...&Luo, L .(2019).The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer.MICROELECTRONICS RELIABILITY,100(9),1-5.
MLA	Xu, YN ,et al."The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer".MICROELECTRONICS RELIABILITY 100.9(2019):1-5.