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| Serum microRNA as noninvasive indicator for space radiation 期刊论文 ACTA ASTRONAUTICA, 2018, 卷号: 152, 页码: 101-104 作者: Wei, Wenjun; Wang, Jufang ; He, Jinpeng ; Xie, Xiaodong
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:28/0  |  提交时间:2019/03/27
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| Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment 会议论文 作者: Li BH(李彬鸿) ; Huang Y(黄杨) ; J.Wu; Huang YB(黄云波); Li B(李博)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:36/0  |  提交时间:2019/05/13 |
| The total ionizing dose response of leading-edge FDSOI MOSFETs 会议论文 作者: Wang J(王剑); Li BH(李彬鸿); Huang Y(黄杨); K.Zhao; F.Yu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:24/0  |  提交时间:2019/05/13 |
| Process variation dependence of total ionizing dose effects in bulk nFinFETs 会议论文 作者: Li B(李博) ; Huang YB(黄云波); L.Yang; Zhang QZ(张青竹) ; Zheng ZS(郑中山)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:46/0  |  提交时间:2019/05/13 |
| The total ionizing dose effect of magnetometers system based on tunneling magnetoresistance sensor 会议论文 作者: Li Huang; Tianyang Zhang; Bo Li; Yu Zhang; Yuhong Zhao
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:28/0  |  提交时间:2019/05/10 |
| Total Ionizing Dose Characterization of a SRAM in 28nm UTBB FDSOI Technology 会议论文 作者: Qiwen Zheng; mengxin Liu; Jiangwei Cui; Shanxue Xi; Ying Wei
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:33/0  |  提交时间:2019/05/10 |
| Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment 期刊论文 Microelectronics Reliability, 2018 作者: Zhang QZ(张青竹) ; Yin HX(殷华湘) ; Han ZS(韩郑生) ; Luo JJ(罗家俊) ; Li B(李博)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2019/03/27 |
| Process variation dependence of total ionizing dose effects in bulk nFinFETs 期刊论文 Microelectronics Reliability, 2018 作者: Zheng ZS(郑中山) ; Huang YB(黄云波); Li B(李博) ; Luo JJ(罗家俊) ; Han ZS(韩郑生)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:24/0  |  提交时间:2019/03/28 |
| The total ionizing dose response of leading-edge FDSOI MOSFETs 期刊论文 Microelectronics Reliability, 2018 作者: Li BH(李彬鸿); Gao JT(高见头); Cai XW(蔡小五); Cui Y(崔岩); Wang J(王剑)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:15/0  |  提交时间:2019/03/29 |
| An effective method to compensate total ionizing dose-induced degradation on double-SOI structure 期刊论文 IEEE Transactions on Nuclear Science, 2018 作者: Zheng ZS(郑中山) ; Luo JJ(罗家俊) ; Li BH(李彬鸿) ; Han ZS(韩郑生) ; Zhao X(赵星)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:17/0  |  提交时间:2019/03/27 |