An effective method to compensate total ionizing dose-induced degradation on double-SOI structure

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	An effective method to compensate total ionizing dose-induced degradation on double-SOI structure
	Zheng ZS(郑中山); Luo JJ(罗家俊); Li BH(李彬鸿); Han ZS(韩郑生); Zhao X(赵星); Huang Y(黄杨); Li B(李博); Zhang G(张刚); Gao JT(高见头)
刊名	IEEE Transactions on Nuclear Science
	2018-08-05
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18906]
专题	微电子研究所_硅器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Zheng ZS,Luo JJ,Li BH,et al. An effective method to compensate total ionizing dose-induced degradation on double-SOI structure[J]. IEEE Transactions on Nuclear Science,2018.
APA	Zheng ZS.,Luo JJ.,Li BH.,Han ZS.,Zhao X.,...&Gao JT.(2018).An effective method to compensate total ionizing dose-induced degradation on double-SOI structure.IEEE Transactions on Nuclear Science.
MLA	Zheng ZS,et al."An effective method to compensate total ionizing dose-induced degradation on double-SOI structure".IEEE Transactions on Nuclear Science (2018).