| Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment | |
Zhang QZ(张青竹) ; Yin HX(殷华湘); Han ZS(韩郑生); Luo JJ(罗家俊); Li B(李博); Huang Y(黄杨); Li BH(李彬鸿)
| |
| 刊名 | Microelectronics Reliability
 |
| 2018-09-01 | |
| 文献子类 | 期刊论文 |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18905]  |
| 专题 | 微电子研究所_硅器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhang QZ,Yin HX,Han ZS,et al. Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment[J]. Microelectronics Reliability,2018. |
| APA | Zhang QZ.,Yin HX.,Han ZS.,Luo JJ.,Li B.,...&Li BH.(2018).Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.Microelectronics Reliability. |
| MLA | Zhang QZ,et al."Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment".Microelectronics Reliability (2018). |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论