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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2010    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文 thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS   Organic/inorganic hybrid solar cells based on SnS/SnO nanocrystals and MDMO-PPV 期刊论文 acta materialia, 2010, 卷号: 58, 期号: 15, 页码: 4950-4955 Wang ZJ (Wang Zhijie); Qu SC (Qu Shengchun); Zeng XB (Zeng Xiangbo); Liu JP (Liu Junpeng); Tan FR (Tan Furui); Bi Y (Bi Yu); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：174/16  |  提交时间：2010/09/07 OXIDE  DEVICES   Blue-shift photoluminescence from porous InAlAs 期刊论文 semiconductor science and technology, 2010, 卷号: 25, 期号: 11, 页码: art. no. 115006 Jiang YC (Jiang Y. C.); Liu FQ (Liu F. Q.); Wang LJ (Wang L. J.); Yin W (Yin W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：51/0  |  提交时间：2010/12/28 MACROPOROUS SILICON  PORE FORMATION  GAP  INP  AL0.48IN0.52AS  NANOSTRUCTURES  MORPHOLOGY   One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals 期刊论文 nanotechnology, 2010, 卷号: 21, 期号: 28, 页码: art. no. 285602 Tang AW (Tang Aiwei); Qu SC (Qu Shengchun); Li K (Li Kai); Hou YB (Hou Yanbing); Teng F (Teng Feng); Cao J (Cao Jie); Wang YS (Wang Yongsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：218/43  |  提交时间：2010/07/18 BINARY NANOPARTICLE SUPERLATTICES  LIGHT-EMITTING-DIODES  SOLVENTLESS SYNTHESIS  CDSE NANOCRYSTALS  QUANTUM DOTS  MONODISPERSE NANOCRYSTALS  OPTICAL-PROPERTIES  CDTE NANOCRYSTALS  CU2S NANOCRYSTALS  SOLAR-CELLS   Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文 journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo) 收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04 Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials   Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文 rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172 作者:  Wei TB;  Yang JK;  Duan RF 收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05 GaN  HVPE  freestanding thick films  stress release  photoluminescence  VAPOR-PHASE EPITAXY  GROWTH  PRESSURE  HVPE