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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2008    学科主题：半导体材料    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Yan, JC; Wang, JX; Liu, Z; Liu, NX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 DIODES   Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Xu B;  Jin P 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09 INAS   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS   Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Yin, HB; Wang, XL; Hu, GX; Ran, JX; Xiao, HL; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Zhao, YM; Ning, J; Sun, GS; Liu, XF; Wang, L; Ji, G; Wang, L; Zhao, WS; Li, JM; Yang, FH 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 MICROMECHANICAL RESONATORS  FREQUENCY   Combined transparent electrodes for high power GaN-based LEDs with long life time 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Wang, LC; Yi, XY; Wang, XD; Wang, GH; Li, JM 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 LIGHT-EMITTING-DIODES  EFFICIENCY   High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09