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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2007    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Photoluminescence from Er-doped Si-in-SiNx thin films 期刊论文 optical materials, 2007, 卷号: 29, 期号: 8, 页码: 1071-1074 Bian LF; Zhang CG; Chen WD; Hsu CC; Ma LB; Song R; Cao ZX 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 photoluminescence   Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 5, 页码: 2915-2919 Xu Y (Xu Ying); Diao HW (Diao Hong-Wei); Zhang SB (Zhang Shi-Bin); Li XD (Li Xu-Dong); Zeng XB (Zeng Xiang-Bo); Wang WJ (Wang Wen-Jing); Liao XB (Liao Xian-Bo) 收藏  |  浏览/下载：21/0  |  提交时间：2010/03/29 infrared absorption spectra   Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：103/26  |  提交时间：2010/03/29 homoepitaxy  4H-SiC  multi-epilayer  UV detection  p(+)-pi-n(-)  ULTRAVIOLET PHOTODETECTOR  EPITAXIAL-GROWTH   Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：162/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE