Photoluminescence from Er-doped Si-in-SiNx thin films

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	Photoluminescence from Er-doped Si-in-SiNx thin films
	Bian LF ; Zhang CG ; Chen WD ; Hsu CC ; Ma LB ; Song R ; Cao ZX
刊名	optical materials
	2007
卷号	29 期号:8 页码:1071-1074
关键词	photoluminescence
ISSN号	issn: 0925-3467
通讯作者	bian, lf, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china. 电子邮箱地址: guobian@semi.ac.cn
中文摘要	photoluminescence from er3+-implanted si-in-sin, films emitting efficiently visible light were investigated. a stark structure in the er3+ photoluminescence spectrum was observed at room temperature, which reveals more than one site symmetry for the er3+-centers in the si-in-sin, matrix. the correlation between the visible photoluminescence from the silicon nanoparticles and the 1.54 mu m emission from the er3+-centers was discussed. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9520]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Bian LF,Zhang CG,Chen WD,et al. Photoluminescence from Er-doped Si-in-SiNx thin films[J]. optical materials,2007,29(8):1071-1074.
APA	Bian LF.,Zhang CG.,Chen WD.,Hsu CC.,Ma LB.,...&Cao ZX.(2007).Photoluminescence from Er-doped Si-in-SiNx thin films.optical materials,29(8),1071-1074.
MLA	Bian LF,et al."Photoluminescence from Er-doped Si-in-SiNx thin films".optical materials 29.8(2007):1071-1074.