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| Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser 期刊论文 japanese journal of applied physics part 1-regular papers short notes & review papers, 1998, 卷号: 37, 期号: 6b, 页码: 3673-3675 Pan Z; Zhang Y; Du Y; Wu RH 收藏  |  浏览/下载:31/0  |  提交时间:2010/08/12
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| Temperature dependence of the Fermi level in low-temperature-grown GaAs 期刊论文 applied physics letters, 1998, 卷号: 72, 期号: 15, 页码: 1866-1868 Chen YH; Yang Z; Wang ZG; Li RG 收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
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| Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure 期刊论文 chinese physics letters, 1998, 卷号: 15, 期号: 1, 页码: 57-59 作者: Xu B 收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12
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| Improvement of Ge self-organized quantum dots by use of Sb surfactant 期刊论文 applied physics letters, 1998, 卷号: 72, 期号: 20, 页码: 2541-2543 Peng CS; Huang Q; Cheng WQ; Zhou JM; Zhang YH; Sheng TT; Tung CH 收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12
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| Effects of annealing on self-organized InAs quantum islands on GaAs (100) 期刊论文 applied physics letters, 1998, 卷号: 73, 期号: 24, 页码: 3518-3520 Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ 收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
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| Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots 期刊论文 superlattices and microstructures, 1998, 卷号: 23, 期号: 2, 页码: 381-387 Xu ZY; Lu ZD; Yuan ZL; Yang XP; Zheng BZ; Xu JZ; Ge WK; Wang Y; Wang J; Chang LL 收藏  |  浏览/下载:28/0  |  提交时间:2010/08/12
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| Electronic structures of GaAs/AlAs lateral superlattices 期刊论文 journal of physics-condensed matter, 1998, 卷号: 10, 期号: 28, 页码: 6311-6319 Li SS; Zhu BF 收藏  |  浏览/下载:28/0  |  提交时间:2010/08/12
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| Application of Low and Ultra-Low Pressure Reverse Osmosis Membranes to Water Treatment 期刊论文 半导体学报, 1998, 卷号: 19, 期号: 12, 页码: 945 闻瑞梅 收藏  |  浏览/下载:14/0  |  提交时间:2010/11/23 |
| Oscillatory magneto-conductance in quantum waveguides with lateral multi-barrier structures 期刊论文 international journal of modern physics b, 1998, 卷号: 12, 期号: 6, 页码: 653-661 Gu BY; Sheng WD; Wang J 收藏  |  浏览/下载:30/0  |  提交时间:2010/08/12
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| Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer 期刊论文 applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111 Wang LS; Liu XL; Zan YD; Wang J; Wang D; Lu DC; Wang ZG 收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
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